Package structures and methods of forming the same

ABSTRACT

An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.

This application claims the benefit of U.S. Provisional Application No.62/421,787, filed on Nov. 14, 2016, entitled “Package Structures andMethods of Forming the Same,” which patent application is incorporatedherein by reference.

BACKGROUND

Since the development of the integrated circuit (IC), the semiconductorindustry has experienced continued rapid growth due to continuousimprovements in the integration density of various electronic components(i.e., transistors, diodes, resistors, capacitors, etc.). For the mostpart, these improvements in integration density have come from repeatedreductions in minimum feature size, which allows more components to beintegrated into a given area.

These integration improvements are essentially two-dimensional (2D) innature, in that the area occupied by the integrated components isessentially on the surface of the semiconductor wafer. The increaseddensity and corresponding decrease in area of the integrated circuit hasgenerally surpassed the ability to bond an integrated circuit chipdirectly onto a substrate. Interposers have been used to redistributeball contact areas from that of the chip to a larger area of theinterposer. Further, interposers have allowed for a three-dimensional(3D) package that includes multiple chips. Other packages have also beendeveloped to incorporate 3D aspects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 through 15 are cross-sectional views and plan views in anexample process of forming a package structure in accordance with someembodiments.

FIG. 16 illustrates a cross-sectional view of a package structure inaccordance with some embodiments.

FIG. 17 illustrates a cross-sectional view of a package structure inaccordance with some embodiments.

FIG. 18 illustrates a cross-sectional view of a package structure inaccordance with some embodiments.

FIGS. 19 and 20 illustrate cross-sectional views of a package structurein accordance with some embodiments.

FIG. 21 illustrates a cross-sectional view of a package structure inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments discussed herein may be discussed in a specific context,namely a package structure including dummy die structures adjacent theactive dies to reduce the warpage of the package structure. Thisreduction of the warpage of the package structure enables a morereliable package structure by reducing the likelihood of cold jointsbetween the active dies and the interposer. In some embodiments, thedummy dies are in the scribe line regions and cover structures arecovering some of the active dies while other active dies are not coveredby cover structures. The dummy dies may allow for more control of theratio of the encapsulant and thus may reduce the stress and warpage fromthe coefficient of thermal expansion (CTE) mismatch. In someembodiments, the encapsulant can be omitted as the dummy dies in thescribe line regions and/or the cover structures provide sufficientsupport and protection for the package structure. In some embodiments,the active dies are stacks of one or more dies (logic die stacks and/ormemory die stacks) with the topmost die of the die stacks being thickerthan the other dies of the die stacks. In these embodiments, the dummydies in the scribe line regions and the encapsulant can be omitted asthicker top dies of the die stacks provide sufficient support andprotection for the package structure.

Embodiments will be described with respect to a specific context, namelya Die-Interposer-Substrate stacked package usingChip-on-Wafer-on-Substrate (CoWoS) processing. Other embodiments mayalso be applied, however, to other packages, such as a Die-Die-Substratestacked package, and other processing. Embodiments discussed herein areto provide examples to enable making or using the subject matter of thisdisclosure, and a person having ordinary skill in the art will readilyunderstand modifications that can be made while remaining withincontemplated scopes of different embodiments. Like reference numbers andcharacters in the figures below refer to like components. Althoughmethod embodiments may be discussed as being performed in a particularorder, other method embodiments may be performed in any logical order.

FIG. 1 generically illustrates the formation of one or more die 68. Asubstrate 60 comprises one or more die 68 during processing. Thesubstrate 60 in an embodiment is a wafer and may comprise a bulksemiconductor substrate, semiconductor-on-insulator (SOI) substrate,multi-layered semiconductor substrate, or the like. The semiconductormaterial of the substrate 60 may be silicon, germanium, a compoundsemiconductor including silicon germanium, silicon carbide, galliumarsenic, gallium phosphide, indium phosphide, indium arsenide, and/orindium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof. Othersubstrates, such as multi-layered or gradient substrates, may also beused. The substrate 60 may be doped or undoped. Devices, such astransistors, capacitors, resistors, diodes, and the like, may be formedin and/or on an active surface 62 of the substrate 60.

An interconnect structure 64 comprising one or more dielectric layer(s)and respective metallization pattern(s) is formed on the active surface62. The metallization pattern(s) in the dielectric layer(s) may routeelectrical signals between the devices, such as by using vias and/ortraces, and may also contain various electrical devices, such ascapacitors, resistors, inductors, or the like. The various devices andmetallization patterns may be interconnected to perform one or morefunctions. The functions may include memory structures, processingstructures, sensors, amplifiers, power distribution, input/outputcircuitry, or the like. Additionally, die connectors 66, such asconductive pillars (for example, comprising a metal such as copper), areformed in and/or on the interconnect structure 64 to provide an externalelectrical connection to the circuitry and devices. In some embodiments,the die connectors 66 protrude from the interconnect structure 64 toform pillar structure to be utilized when bonding the dies 68 to otherstructures. One of ordinary skill in the art will appreciate that theabove examples are provided for illustrative purposes. Other circuitrymay be used as appropriate for a given application.

More particularly, an inter-metallization dielectric (IMD) layer may beformed in the interconnect structure 64. The IMD layer may be formed,for example, of a low-K dielectric material, such as phosphosilicateglass (PSG), borophosphosilicate glass (BPSG), fluorosilicate glass(FSG), SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers, silicon carbonmaterial, compounds thereof, composites thereof, combinations thereof,or the like, by any suitable method known in the art, such as spinning,chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD),high-density plasma chemical vapor deposition (HDP-CVD), or the like. Ametallization pattern may be formed in the IMD layer, for example, byusing photolithography techniques to deposit and pattern a photoresistmaterial on the IMD layer to expose portions of the IMD layer that areto become the metallization pattern. An etch process, such as ananisotropic dry etch process, may be used to create recesses and/oropenings in the IMD layer corresponding to the exposed portions of theIMD layer. The recesses and/or openings may be lined with a diffusionbarrier layer and filled with a conductive material. The diffusionbarrier layer may comprise one or more layers of TaN, Ta, TiN, Ti, CoW,or the like, deposited by atomic layer deposition (ALD), or the like,and the conductive material may comprise copper, aluminum, tungsten,silver, and combinations thereof, or the like, deposited by CVD,physical vapor deposition (PVD), or the like. Any excessive diffusionbarrier layer and/or conductive material on the IMD layer may beremoved, such as by using a chemical mechanical polish (CMP).

In FIG. 2, the substrate 60 including the interconnect structure 64 issingulated into individual dies 68. Typically, the dies 68 contain thesame circuitry, such as devices and metallization patterns, although thedies may have different circuitry. The singulation may be by sawing,dicing, or the like.

The dies 68 may be logic dies (e.g., central processing unit, graphicsprocessing unit, system-on-a-chip, microcontroller, etc.), memory dies(e.g., dynamic random access memory (DRAM) die, static random accessmemory (SRAM) die, etc.), power management dies (e.g., power managementintegrated circuit (PMIC) die), radio frequency (RF) dies, sensor dies,micro-electro-mechanical-system (MEMS) dies, signal processing dies(e.g., digital signal processing (DSP) die), front-end dies (e.g.,analog front-end (AFE) dies), the like, or a combination thereof. Also,in some embodiments, the dies 68 may be different sizes (e.g., differentheights and/or surface areas), and in other embodiments, the dies 68 maybe the same size (e.g., same heights and/or surface areas).

FIG. 3 illustrates the formation of a first side of one or morecomponents 96. As illustrated in FIG. 14, one or more components 96 maybe formed from the substrate 70. The components 96 may be an interposeror another die. The substrate 70 can be a wafer. The substrate 70 maycomprise a bulk semiconductor substrate, SOI substrate, multi-layeredsemiconductor substrate, or the like. The semiconductor material of thesubstrate 70 may be silicon, germanium, a compound semiconductorincluding silicon germanium, silicon carbide, gallium arsenic, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide;an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs,GaInP, and/or GaInAsP; or combinations thereof. Other substrates, suchas multi-layered or gradient substrates, may also be used. The substrate70 may be doped or undoped. Devices, such as transistors, capacitors,resistors, diodes, and the like, may be formed in and/or on a firstsurface 72, which may also be referred to as an active surface, of thesubstrate 70. In embodiments where the components 96 are interposers,the components 96 will generally not include active devices therein,although the interposer may include passive devices formed in and/or ona first surface 72 and/or in redistribution structure 76.

Through-vias (TVs) 74 are formed to extend from the first surface 72 ofsubstrate 70 into substrate 70. The TVs 74 are also sometimes referredto as through-substrate vias or through-silicon vias when substrate 70is a silicon substrate. The TVs 74 may be formed by forming recesses inthe substrate 70 by, for example, etching, milling, laser techniques, acombination thereof, and/or the like. A thin dielectric material may beformed in the recesses, such as by using an oxidation technique. A thinbarrier layer may be conformally deposited over the front side of thesubstrate 70 and in the openings, such as by CVD, ALD, PVD, thermaloxidation, a combination thereof, and/or the like. The barrier layer maycomprise a nitride or an oxynitride, such as titanium nitride, titaniumoxynitride, tantalum nitride, tantalum oxynitride, tungsten nitride, acombination thereof, and/or the like. A conductive material may bedeposited over the thin barrier layer and in the openings. Theconductive material may be formed by an electro-chemical platingprocess, CVD, ALD, PVD, a combination thereof, and/or the like. Examplesof conductive materials are copper, tungsten, aluminum, silver, gold, acombination thereof, and/or the like. Excess conductive material andbarrier layer is removed from the front side of the substrate 70 by, forexample, CMP. Thus, the TVs 74 may comprise a conductive material and athin barrier layer between the conductive material and the substrate 70.

Redistribution structure 76 is formed over the first surface 72 of thesubstrate 70, and is used to electrically connect the integrated circuitdevices, if any, and/or TVs 74 together and/or to external devices. Theredistribution structure 76 may include one or more dielectric layer(s)and respective metallization pattern(s) in the dielectric layer(s). Themetallization patterns may comprise vias and/or traces to interconnectany devices and/or TVs 74 together and/or to an external device. Themetallization patterns are sometimes referred to as Redistribution Lines(RDL). The dielectric layers may comprise silicon oxide, siliconnitride, silicon carbide, silicon oxynitride, low-K dielectric material,such as PSG, BPSG, FSG, SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers,silicon carbon material, compounds thereof, composites thereof,combinations thereof, or the like. The dielectric layers may bedeposited by any suitable method known in the art, such as spinning,CVD, PECVD, HDP-CVD, or the like. A metallization pattern may be formedin the dielectric layer, for example, by using photolithographytechniques to deposit and pattern a photoresist material on thedielectric layer to expose portions of the dielectric layer that are tobecome the metallization pattern. An etch process, such as ananisotropic dry etch process, may be used to create recesses and/oropenings in the dielectric layer corresponding to the exposed portionsof the dielectric layer. The recesses and/or openings may be lined witha diffusion barrier layer and filled with a conductive material. Thediffusion barrier layer may comprise one or more layers of TaN, Ta, TiN,Ti, CoW, or the like, deposited by ALD, or the like, and the conductivematerial may comprise copper, aluminum, tungsten, silver, andcombinations thereof, or the like, deposited by CVD, PVD, or the like.Any excessive diffusion barrier layer and/or conductive material on thedielectric layer may be removed, such as by using a CMP.

Electrical connectors 77/78 are formed at the top surface of theredistribution structure 76 on conductive pads. In some embodiments, theconductive pads include under bump metallurgies (UBMs). In theillustrated embodiment, the pads are formed in openings of thedielectric layers of the redistribution structure 76. In anotherembodiment, the pads (UBMs) can extend through an opening of adielectric layer of the redistribution structure 76 and also extendacross the top surface of the redistribution structure 76. As an exampleto form the pads, a seed layer (not shown) is formed at least in theopening in the dielectric layer of the redistribution structure 76. Insome embodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In some embodiments, the seed layer comprises atitanium layer and a copper layer over the titanium layer. The seedlayer may be formed using, for example, PVD or the like. A photo resistis then formed and patterned on the seed layer. The photo resist may beformed by spin coating or the like and may be exposed to light forpatterning. The pattern of the photo resist corresponds to the pads. Thepatterning forms openings through the photo resist to expose the seedlayer. A conductive material is formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductivematerial may be formed by plating, such as electroplating or electrolessplating, or the like. The conductive material may comprise a metal, likecopper, titanium, tungsten, aluminum, or the like. Then, the photoresist and portions of the seed layer on which the conductive materialis not formed are removed. The photo resist may be removed by anacceptable ashing or stripping process, such as using an oxygen plasmaor the like. Once the photo resist is removed, exposed portions of theseed layer are removed, such as by using an acceptable etching process,such as by wet or dry etching. The remaining portions of the seed layerand conductive material form the pads. In the embodiment, where the padsare formed differently, more photo resist and patterning steps may beutilized.

In some embodiments, the electrical connectors 77/78 include a metalpillar 77 with a metal cap layer 78, which may be a solder cap 78, overthe metal pillar 77. The electrical connectors 77/78 including thepillar 77 and the cap layer 78 are sometimes referred to as micro bumps77/78. In some embodiments, the metal pillars 77 include a conductivematerial such as copper, aluminum, gold, nickel, palladium, the like, ora combination thereof and may be formed by sputtering, printing, electroplating, electroless plating, CVD, or the like. The metal pillars 77 maybe solder free and have substantially vertical sidewalls. In someembodiments, a metal cap layer 78 is formed on the top of the metalpillar 77. The metal cap layer 78 may include nickel, tin, tin-lead,gold, copper, silver, palladium, indium, nickel-palladium-gold,nickel-gold, the like, or a combination thereof and may be formed by aplating process.

In another embodiment, the electrical connectors 77/78 do not includethe metal pillars and are solder balls and/or bumps, such as controlledcollapse chip connection (C4), electroless nickel immersion Gold (ENIG),electroless nickel electroless palladium immersion gold technique(ENEPIG) formed bumps, or the like. In this embodiment, the bumpelectrical connectors 77/78 may include a conductive material such assolder, copper, aluminum, gold, nickel, silver, palladium, tin, thelike, or a combination thereof. In this embodiment, the electricalconnectors 77/78 are formed by initially forming a layer of solderthrough such commonly used methods such as evaporation, electroplating,printing, solder transfer, ball placement, or the like. Once a layer ofsolder has been formed on the structure, a reflow may be performed inorder to shape the material into the desired bump shapes.

In FIG. 4, the dies 68 and the dies 88 are attached to the first side ofthe components 96, for example, through flip-chip bonding by way of theelectrical connectors 77/78 and the metal pillars 79 on the dies to formconductive joints 91. The metal pillars 79 may be similar to the metalpillars 77 and the description is not repeated herein. The dies 68 andthe dies 88 may be placed on the electrical connectors 77/78 using, forexample, a pick-and-place tool. In some embodiments, the metal caplayers 78 are formed on the metal pillars 77 (as shown in FIG. 3), themetal pillars 79 of the dies 68 and the dies 88, or both.

The dies 88 may be formed through similar processing as described abovein reference to the dies 68. In some embodiments, the dies 88 includeone or more memory dies, such as a stack of memory dies (e.g., DRAMdies, SRAM dies, High-Bandwidth Memory (HBM) dies, Hybrid Memory Cubes(HMC) dies, or the like). In the stack of memory dies embodiments, a die88 can include both memory dies and a memory controller, such as, forexample, a stack of four or eight memory dies with a memory controller.Also, in some embodiments, the dies 88 may be different sizes (e.g.,different heights and/or surface areas), and in other embodiments, thedies 88 may be the same size (e.g., same heights and/or surface areas).

The dies 88 include a main body 80, an interconnect structure 84, anddie connectors 86. The main body 80 of the dies 88 may comprise anynumber of dies, substrates, transistors, active devices, passivedevices, or the like. In an embodiment, the main body 80 may include abulk semiconductor substrate, semiconductor-on-insulator (SOI)substrate, multi-layered semiconductor substrate, or the like. Thesemiconductor material of the main body 80 may be silicon, germanium, acompound semiconductor including silicon germanium, silicon carbide,gallium arsenic, gallium phosphide, indium phosphide, indium arsenide,and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP,AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof.Other substrates, such as multi-layered or gradient substrates, may alsobe used. The main body 80 may be doped or undoped. Devices, such astransistors, capacitors, resistors, diodes, and the like, may be formedin and/or on an active surface.

An interconnect structure 84 comprising one or more dielectric layer(s)and respective metallization pattern(s) is formed on the active surface.The metallization pattern(s) in the dielectric layer(s) may routeelectrical signals between the devices, such as by using vias and/ortraces, and may also contain various electrical devices, such ascapacitors, resistors, inductors, or the like. The various devices andmetallization patterns may be interconnected to perform one or morefunctions. The functions may include memory structures, processingstructures, sensors, amplifiers, power distribution, input/outputcircuitry, or the like. Additionally, die connectors 86, such asconductive pillars (for example, comprising a metal such as copper), areformed in and/or on the interconnect structure 84 to provide an externalelectrical connection to the circuitry and devices. In some embodiments,the die connectors 86 protrude from the interconnect structure 84 toform pillar structure to be utilized when bonding the dies 88 to otherstructures. One of ordinary skill in the art will appreciate that theabove examples are provided for illustrative purposes. Other circuitrymay be used as appropriate for a given application.

More particularly, an IMD layer may be formed in the interconnectstructure 64. The IMD layer may be formed, for example, of a low-Kdielectric material, such as PSG, BPSG, FSG, SiO_(x)C_(y),Spin-On-Glass, Spin-On-Polymers, silicon carbon material, compoundsthereof, composites thereof, combinations thereof, or the like, by anysuitable method known in the art, such as spinning, CVD, PECVD, HDP-CVD,or the like. A metallization pattern may be formed in the IMD layer, forexample, by using photolithography techniques to deposit and pattern aphotoresist material on the IMD layer to expose portions of the IMDlayer that are to become the metallization pattern. An etch process,such as an anisotropic dry etch process, may be used to create recessesand/or openings in the IMD layer corresponding to the exposed portionsof the IMD layer. The recesses and/or openings may be lined with adiffusion barrier layer and filled with a conductive material. Thediffusion barrier layer may comprise one or more layers of tantalumnitride, tantalum, titanium nitride, titanium, cobalt tungsten, thelike, or a combination thereof, deposited by ALD, or the like. Theconductive material of the metallization patterns may comprise copper,aluminum, tungsten, silver, and combinations thereof, or the like,deposited by CVD, PVD, or the like. Any excessive diffusion barrierlayer and/or conductive material on the IMD layer may be removed, suchas by using a CMP.

In the embodiments wherein the die connectors 66 and 86 protrude fromthe interconnect structures 64 and 84, respectively, the metal pillars79 may be excluded from the dies 68 and 88 as the protruding dieconnectors 66 and 86 may be used as the pillars for the metal cap layers78.

The conductive joints 91 electrically couple the circuits in the dies 68and the dies 88 through interconnect structures 84 and 64 and dieconnectors 86 and 66, respectively, to redistribution structure 76 andTVs 74 in components 96.

In some embodiments, before bonding the electrical connectors 77/78, theelectrical connectors 77/78 are coated with a flux (not shown), such asa no-clean flux. The electrical connectors 77/78 may be dipped in theflux or the flux may be jetted onto the electrical connectors 77/78. Inanother embodiment, the flux may be applied to the electrical connectors79/78. In some embodiments, the electrical connectors 77/78 and/79/78may have an epoxy flux (not shown) formed thereon before they arereflowed with at least some of the epoxy portion of the epoxy fluxremaining after the dies 68 and the dies 88 are attached to thecomponents 96. This remaining epoxy portion may act as an underfill toreduce stress and protect the joints resulting from the reflowing theelectrical connectors 77/78/79.

The bonding between the dies 68 and 88 and the components 96 may be asolder bonding or a direct metal-to-metal (such as a copper-to-copper ortin-to-tin) bonding. In an embodiment, the dies 68 and the dies 88 arebonded to the components 96 by a reflow process. During this reflowprocess, the electrical connectors 77/78/79 are in contact with the dieconnectors 66 and 86, respectively, and the pads of the redistributionstructure 76 to physically and electrically couple the dies 68 and thedies 88 to the components 96. After the bonding process, an IMC (notshown) may form at the interface of the metal pillars 77 and 79 and themetal cap layers 78.

In FIG. 4 and subsequent figures, a first package region 90 and a secondpackage region 92 for the formation of a first package and a secondpackage, respectively, are illustrated. Scribe line regions 94 arebetween adjacent package regions. As illustrated in FIG. 4, a die 68 andmultiple dies 88 are attached in each of the first package region 90 andthe second package region 92.

In some embodiments, the dies 68 are system-on-a-chip (SoC) or agraphics processing unit (GPU) and the second dies are memory dies thatmay utilized by the dies 68. In an embodiment, the dies 88 are stackedmemory dies. For example, the stacked memory dies 88 may includelow-power (LP) double data rate (DDR) memory modules, such as LPDDR1,LPDDR2, LPDDR3, LPDDR4, or the like memory modules.

In FIG. 5, an underfill material 100 is dispensed into the gaps betweenthe dies 68, the dies 88, the redistribution structure 76, andsurrounding the conductive joints 91. In FIG. 5 and subsequent Figures,the illustration of each of the conductive joints 91 is shown asincluding a single structure, but as illustrated in FIG. 4, each of theconductive joints 91 can include two metal pillars 77 and 79 with ametal layer 78 therebetween. The underfill material 100 may extend upalong sidewall of the dies 68 and the dies 88. The underfill material100 may be any acceptable material, such as a polymer, epoxy, moldingunderfill, or the like. The underfill material 100 may be formed by acapillary flow process after the dies 68 and 88 are attached, or may beformed by a suitable deposition method before the dies 68 and 88 areattached.

In FIGS. 6A and 6B, dummy dies 106 are adhered in the scribe lineregions 94 adjacent the dies 88 with an attaching structure 104. FIGS.6A and 6B illustrate two embodiments for the attaching structure 104.The dummy dies 106 being placed in the scribe line regions 94 can helpto prevent warpage during and after singulation (see FIG. 14) of thepackages in the first and second package regions 90 and 92. One way thedummy dies 106 can help to reduce warpage is to provide support to thepackage during the actual singulation process. Another way that thedummy dies 106 can prevent warpage is to reduce the coefficient ofthermal expansion (CTE) mismatch between the components 96 and thesubsequently formed encapsulant 112, if present, (see FIG. 8) as thedummy dies 106 have a similar CTE to the components 96 and they reducethe amount of encapsulant 112 necessary in the package.

The dummy dies 106 are attached to the components 96 with the attachingstructure 104. In some embodiments, the attaching structure 104 is oneor more micro bumps that bond the dummy dies 106 to the components. Insome embodiments, the attaching structure 104 is an adhesive thatadheres the dummy dies 106 to the components 96. The dummy dies 106 maybe made of silicon, a dielectric material, the like, or a combinationthereof. In some embodiments, the dummy dies 106 are actually defectiveactive dies that have been recycled as dummy dies 106. In someembodiments, the dummy dies 106 are bulk material and do not include anyactive or passive devices. In some embodiments, the top surfaces of thedummy dies 106 are level with the back sides of the dies 68.

In FIG. 6A, the micro bump attaching structure 104 embodiment isillustrated. In this embodiment, the micro bumps 104 are formed onbottom surfaces of the dummy dies 106, the top surfaces of thecomponents 96, or both. The micro bumps 104 can be formed at a same timeas micro bumps (e.g. electrical connectors 77/78/79) that bond the dies68 and 88. In particular, the structures 104A, 104B, and 104C of theattaching structure 104 can be the same as the structures 77, 78, and79, respectively, and the description of these structures is notrepeated herein. The micro bumps 104 bond the dummy dies 106 to thecomponents 96, such as the redistribution structure 76 in theillustration. The micro bumps 104 of the dummy dies 106 can be reflowedtogether with the electrical connectors 77/78/79 of the dies 68 and 88.The dummy dies 106 may be placed on the micro bumps 104 by using, forexample, a pick-and-place tool. The underfill material 100 can be curedbefore or after the dummy dies 106 are bonded.

In FIG. 6B, the adhesive attaching structure 104 embodiment isillustrated. In this embodiment, the adhesive 104 is on bottom surfacesof the dummy dies 106 and adheres the dummy dies 106 to the components96, such as the redistribution structure 76 in the illustration. Theadhesive 104 may be any suitable adhesive, epoxy, die attach film (DAF),or the like. The adhesive 104 may be applied to a bottom surface of thedummy dies 106 or may be applied over the surface of the redistributionstructure 76. The dummy dies 106 may be adhered to the redistributionstructure 76 by the adhesive 104 using, for example, a pick-and-placetool. The underfill material 100 can be cured before or after the dummydies 106 are adhered.

In FIG. 7, cover structures 110 are adhered on back sides of the dies88. The cover structures 110 significantly reduce the stress on the dies88 and can protect the dies 88 during subsequent processing. In someembodiments, the dies 88 include a stack of one or more memory dies andthe cover structures 110 are thicker than each of the one or more memorydies of the dies 88. In some embodiments, the cover structures 110 havea thickness measured in direction perpendicular to a major surface ofthe substrate 70 in a range from about 50 μm to about 200 μm, such asabout 100 μm.

In some embodiments, the top surfaces of the cover structures 110 arelevel with the back sides of the dies 68 and the top surfaces of thedummy dies 106. In some embodiments, the cover structures 110 areadhered with an adhesive 108. The cover structures 110 may be made ofsilicon, a dielectric material, the like, or a combination thereof. Thecover structures 110 may comprise the same material as the dummy dies106. In some embodiments, the cover structures 110 are actuallydefective active dies that have been recycled as cover structures 110.In some embodiments, the cover structures 110 are bulk material and donot include any active or passive devices. Adhesive 108 is on bottomsurfaces of the cover structures 110 and adheres the cover structures110 to the dies 88. The adhesive 108 may be any suitable adhesive,epoxy, DAF, or the like. The cover structures 110 may be adhered to thedies 88 by the adhesive 108 using, for example, a pick-and-place tool.

In FIG. 8, an encapsulant 112 is formed on the various components. Theencapsulant 112 may be a molding compound, epoxy, or the like, and maybe applied by compression molding, transfer molding, or the like. Acuring step is performed to cure the encapsulant 112, wherein the curingmay be a thermal curing, a Ultra-Violet (UV) curing, or the like. Insome embodiments, the dies 68, the dummy dies 106, and/or the coverstructures 110 are buried in the encapsulant 112, and after the curingof the encapsulant 112, a planarization step, such as a grinding, may beperformed to remove excess portions of the encapsulant 112, which excessportions are over top surfaces of dies 68, dummy dies 106, and/or coverstructures 110. Accordingly, top surfaces of dies 68, dummy dies 106,and/or the cover structures 110 are exposed, and are level with a topsurface of the encapsulant 112.

FIGS. 9 through 12 illustrate the formation of the second side ofcomponents 96. In FIG. 9, the structure of FIG. 8 is flipped over toprepare for the formation of the second side of components 96. Althoughnot shown, the structure may be placed on a carrier or support structurefor the process of FIGS. 9 through 12. As shown in FIG. 9, at this stageof processing, the substrate 70 and redistribution structure 76 of thecomponents 96 have a combined thickness T1 in a range from about 750 μmto about 800 μm, such as about 775 μm. The dummy dies 106 (includingattaching structure 104) have a thickness T2 in a range from about 750μm to about 800 μm, such as about 760 μm. In some embodiments, one orboth of the dies 68 and 88 (including conductive joints 91 and coverstructures 110 for dies 88) have the thickness T2.

In FIG. 10, a thinning process is performed on the second side of thesubstrate 70 to thin the substrate 70 to a second surface 116 until TVs74 are exposed. The thinning process may include an etching process, agrinding process, the like, or a combination thereof. In someembodiments, after the thinning process, the substrate 70 andredistribution structure 76 of the components 96 have a combinedthickness T3 in a range from about 20 μm to about 180 μm, such as about100 μm.

In FIG. 11, a redistribution structure is formed on the second surface116 of the substrate 70, and is used to electrically connect the TVs 74together and/or to external devices. The redistribution structureincludes one or more dielectric layers 117 and metallization patterns118 in the one or more dielectric layers 117. The metallization patternsmay comprise vias and/or traces to interconnect TVs 74 together and/orto an external device. The metallization patterns 118 are sometimesreferred to as Redistribution Lines (RDLs). The dielectric layers 117may comprise silicon oxide, silicon nitride, silicon carbide, siliconoxynitride, low-K dielectric material, such as PSG, BPSG, FSG,SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers, silicon carbon material,compounds thereof, composites thereof, combinations thereof, or thelike. The dielectric layers 117 may be deposited by any suitable methodknown in the art, such as spinning, CVD, PECVD, HDP-CVD, or the like.The metallization patterns 118 may be formed in the dielectric layer117, for example, by using photolithography techniques to deposit andpattern a photoresist material on the dielectric layer 117 to exposeportions of the dielectric layer 117 that are to become themetallization pattern 118. An etch process, such as an anisotropic dryetch process, may be used to create recesses and/or openings in thedielectric layer 117 corresponding to the exposed portions of thedielectric layer 117. The recesses and/or openings may be lined with adiffusion barrier layer and filled with a conductive material. Thediffusion barrier layer may comprise one or more layers of TaN, Ta, TiN,Ti, CoW, or the like, deposited by ALD, or the like, and the conductivematerial may comprise copper, aluminum, tungsten, silver, andcombinations thereof, or the like, deposited by CVD, PVC, or the like.Any excessive diffusion barrier layer and/or conductive material on thedielectric layer may be removed, such as by using a CMP.

In FIG. 12, electrical connectors 120 are also formed the metallizationpatterns 118 and are electrically coupled to TVs 74. The electricalconnectors 120 are formed at the top surface of the redistributionstructure on the metallization patterns 118. In some embodiments, themetallization patterns 118 include UBMs. In the illustrated embodiment,the pads are formed in openings of the dielectric layers 117 of theredistribution structure. In another embodiment, the pads (UBMs) canextend through an opening of a dielectric layer 117 of theredistribution structure and also extend across the top surface of theredistribution structure.

As an example to form the pads, a seed layer (not shown) is formed atleast in the opening in one of the dielectric layer 117 of theredistribution structure. In some embodiments, the seed layer is a metallayer, which may be a single layer or a composite layer comprising aplurality of sub-layers formed of different materials. In someembodiments, the seed layer comprises a titanium layer and a copperlayer over the titanium layer. The seed layer may be formed using, forexample, PVD or the like. A photo resist is then formed and patterned onthe seed layer. The photo resist may be formed by spin coating or thelike and may be exposed to light for patterning. The pattern of thephoto resist corresponds to the pads. The patterning forms openingsthrough the photo resist to expose the seed layer. A conductive materialis formed in the openings of the photo resist and on the exposedportions of the seed layer. The conductive material may be formed byplating, such as electroplating or electroless plating, or the like. Theconductive material may comprise a metal, like copper, titanium,tungsten, aluminum, or the like. Then, the photo resist and portions ofthe seed layer on which the conductive material is not formed areremoved. The photo resist may be removed by an acceptable ashing orstripping process, such as using an oxygen plasma or the like. Once thephoto resist is removed, exposed portions of the seed layer are removed,such as by using an acceptable etching process, such as by wet or dryetching. The remaining portions of the seed layer and conductivematerial form the pads. In the embodiment, where the pads are formeddifferently, more photo resist and patterning steps may be utilized.

In some embodiments, the electrical connectors 120 are solder ballsand/or bumps, such as ball grid array (BGA) balls, C4 micro bumps, ENIGformed bumps, ENEPIG formed bumps, or the like. The electricalconnectors 120 may include a conductive material such as solder, copper,aluminum, gold, nickel, silver, palladium, tin, the like, or acombination thereof. In some embodiments, the electrical connectors 120are formed by initially forming a layer of solder through such commonlyused methods such as evaporation, electroplating, printing, soldertransfer, ball placement, or the like. Once a layer of solder has beenformed on the structure, a reflow may be performed in order to shape thematerial into the desired bump shapes. In another embodiment, theelectrical connectors 120 are metal pillars (such as a copper pillar)formed by a sputtering, printing, electro plating, electroless plating,CVD, or the like. The metal pillars may be solder free and havesubstantially vertical sidewalls. In some embodiments, a metal cap layer(not shown) is formed on the top of the metal pillar connectors 120. Themetal cap layer may include nickel, tin, tin-lead, gold, silver,palladium, indium, nickel-palladium-gold, nickel-gold, the like, or acombination thereof and may be formed by a plating process.

The electrical connectors 120 may be used to bond to an additionalelectrical component, which may be a semiconductor substrate, a packagesubstrate, a Printed Circuit Board (PCB), or the like (see 300 in FIG.15).

FIG. 13 illustrates a plan view of the package structure in FIG. 12.FIG. 12 is a cross-sectional view along the line A-A in FIG. 13. Asillustrated in FIG. 13, the dummy dies 106 are along the scribe lineregions 94 surrounding each of the package regions 90 and 92.

In some embodiments, the dummy dies 106 are attached in the scribe lineregions 94 and extend only along the scribe line regions 94 that arealong a first direction (e.g. vertical direction of FIG. 13). In someembodiments, the package structures can have more than two dies 88(e.g., can have four dies 88) and the package structure can have moredummy dies 122 interposed between adjacent dies 88 of the same region 90and/or 92. The dummy dies 122 are similar to the dummy dies 106 and thedescription is not repeated herein.

Further, in some embodiments, the dummy dies 106 are attached in thescribe line regions 94 and extend along the scribe line regions 94 thatare along a first direction and second direction (e.g. both vertical andhorizontal directions of FIG. 13) and also interposed between adjacentdies 88 of the same region 90 and/or 92.

Although FIG. 13 shows four regions of the wafer to form four packagestructures after singulation, the disclosure is not limited to thisamount of regions and package structures. In other embodiments, thedisclosure could include more or less regions and package structures.

In FIG. 14, components 96 and dummy dies 106 are singulated betweenadjacent regions 90 and 92 along scribe line regions 94 to formcomponent packages 200 comprising, among other things, a die 68, acomponent 96, dies 88, cover structures 110, and portions 106′ of thedummy dies 106. The singulation may be by sawing, dicing, or the like.As discussed above, the dummy dies 106 help to reduce the stress andwarpage caused during and after the singulation process.

After the singulation process, the remaining portions 106′ of the dummydies 106 have sidewall surfaces that are coterminous with the lateralextents of the component package 200 (see, e.g., FIGS. 14 and 15).

FIG. 15 illustrates the attachment of a component package 200 on asubstrate 300. Electrical connectors 120 are aligned to, and are putagainst, bond pads of the substrate 300. The electrical connectors 120may be reflowed to create a bond between the substrate 300 and thecomponent 96. The substrate 300 may comprise a package substrate, suchas a build-up substrate including a core therein, a laminate substrateincluding a plurality of laminated dielectric films, a PCB, or the like.The substrate 300 may comprise electrical connectors (not shown), suchas solder balls, opposite the component package to allow the substrate300 to be mounted to another device. An underfill material (not shown)can be dispensed between the component package 200 and the substrate 300and surrounding the electrical connectors 120. The underfill materialmay be any acceptable material, such as a polymer, epoxy, moldingunderfill, or the like.

Additionally, one or more surface devices 140 may be connected to thesubstrate 300. The surface devices 140 may be used to provide additionalfunctionality or programming to the component package 200, or thepackage as a whole. In an embodiment, the surface devices 140 mayinclude surface mount devices (SMDs) or integrated passive devices(IPDs) that include passive devices such as resistors, inductors,capacitors, jumpers, combinations of these, or the like that are desiredto be connected to and utilized in conjunction with component package200, or other parts of the package. The surface devices 140 may beplaced on a first major surface of the substrate 300, an opposing majorsurface of the substrate 300, or both, according to various embodiments.

FIG. 16 illustrates a cross-sectional view of a package structure inaccordance with some embodiments. The embodiment in FIG. 16 is similarto the embodiment in FIGS. 1 through 15 except that FIG. 16 does notinclude encapsulant 112. The dummy dies 106 and cover structures 110 mayprovide sufficient stress reduction and protection such that theencapsulant can be omitted. Details of this embodiment that are the sameor similar to the prior embodiment are not repeated herein.

FIG. 17 illustrates a cross-sectional view of a package structure inaccordance with some embodiments. The embodiment in FIG. 16 is similarto the embodiment in FIGS. 1 through 15 except that FIG. 17 includes acover structure 132 over the entire package structure and adhered to thedie 68, dies 88, and dummy dies 106. The adhesive 130 and the coverstructure 132 may be made of similar materials as the adhesive and coverstructure described above in the prior embodiment. Details of thisembodiment that are the same or similar to the prior embodiment are notrepeated herein.

In FIG. 17, the cover structure 132 is adhered by an adhesive 130 to theunderlying components. In some embodiments, the cover structures 132 areplaced after encapsulant 112 is formed. Although not shown the coverstructures 110 can be included on the dies 88 with the cover structure132 overlying the cover structures 110 and the other components of thepackage. In some embodiments, the cover structure 132 is wafer sized andone cover structure is placed over all of regions of the wafer (e.g. 90,92, etc.) and is singulated to form individual cover structures 132 ineach of the package structure regions. In other embodiments, individualcover structures 132 are placed over each of the regions of the wafer(e.g. 90, 92, etc.) before singulation.

FIG. 18 illustrates a cross-sectional view of a package structure inaccordance with some embodiments. The embodiment in FIG. 18 is similarto the embodiment in FIG. 17 except that FIG. 18 does not includeencapsulant 112. The dummy dies 106 and cover structure 132 may providesufficient stress reduction and protection such that the encapsulant canbe omitted. Details of this embodiment that are the same or similar tothe prior embodiment are not repeated herein.

FIG. 19 illustrates a cross-sectional view of a package structure inaccordance with some embodiments. The embodiment in FIG. 19 is similarto the embodiment in FIGS. 1 through 15 except that the packagestructure 500 in FIG. 19 includes dies 400A and 400B and does notinclude dummy dies. Details of this embodiment that are the same orsimilar to the prior embodiment are not repeated herein.

The die 400A may be a logic die (e.g., central processing unit, graphicsprocessing unit, system-on-a-chip, microcontroller, etc.), powermanagement dies (e.g., power management integrated circuit (PMIC) die),radio frequency (RF) dies, sensor dies, micro-electro-mechanical-system(MEMS) dies, signal processing dies (e.g., digital signal processing(DSP) die), front-end dies (e.g., analog front-end (AFE) dies), thelike, or a combination thereof. The die 400A can include one or morelogic dies. The die 400A may be placed and bonded on the component 96similar to the dies 68 described above and the description is notrepeated herein.

The dies 400B may be memory dies, such as DRAM dies, SRAM dies,High-Bandwidth Memory (HBM) dies, Hybrid Memory Cubes (HMC) dies, or thelike. In the some embodiments, a die 400B can include both memory diesand a memory controller, such as, for example, a stack of four or eightmemory dies with a memory controller. The dies 400B may be placed andbonded on the component 96 similar to the dies 88 described above andthe description is not repeated herein.

An exemplary die 400B, in accordance with some embodiments, is depictedin greater detail in FIG. 20. Main body 405 may include a plurality ofstacked memory dies 408 and a top die 412. The stacked memory dies 408may all be identical dies, or memory dies 408 may include dies ofdifferent types and/or structures. Each memory die 408 is connected toan overlying memory die 408 and/or an underlying memory die 407 by aconnector 406. The connectors 406 can be micro bumps or other suitableconnectors. The memory dies 408 may include through vias 410 thatconnect underlying connectors 406 to overlying connectors 406. In someembodiment, the memory dies 408 each have a thickness T4 in a range fromabout 20 μm to about 100 μm, such as about 60 μm.

In some embodiments, the main body 405 may include HBM (high bandwidthmemory) and/or HMC (high memory cube) modules, which may include one ormore memory dies 408 connected to a logic die 402. The logic die 402 mayinclude through vias 404 that connect a conductive feature of aninterconnection region (not shown) to an overlying connector 406 andmemory dies 408. In some embodiments, the logic die 402 may be a memorycontroller. The interconnection region (not shown) may provide aconductive pattern that allows a pin-out contact pattern for main body405 that is different than the pattern of conductive joints 91, allowingfor greater flexibility in the placement of conductive joints 91. Theconductive joints 91 may be disposed on a bottom side of dies 400B, andmay be used to physically and electrically connect dies 400B to thecomponent 96. The conductive joints 91 may be electrically connected tothe logic die 402 and/or the stacked memory dies 408 by theinterconnection region. The conductive joints 91 may be formed usingmethods that are the same or similar to the methods described above forthe conductive joints 91 and the description is not repeated herein.

The top die 412 may be a similar die (in function and circuitry) to thememory dies 408 except that the top die 412 is thicker than the memorydies 408. In some embodiments, the top die 412 is a dummy die and issimilar to the cover structures 110 described above. In someembodiments, the top die 412 has a thickness T5 in a range from about 50μm to about 200 μm, such as about 150 μm. In some embodiments, the topdie 412 has a thickness T5 greater than about 120 μm. It has been foundthat have a top die 412 of the die 400B with a thickness greater thanabout 120 μm increases the yield of the package structure 500 withoutrequiring the dummy dies 106 and cover structures 110 and 132 of theprevious embodiments.

As illustrated by FIG. 20, the main body 405 may be encapsulated in amolding material 414. Molding material 414 may include a moldingcompound, a molding underfill, an epoxy, or a resin.

Although FIG. 20 illustrates a die 400B with memory dies, the logic die400A of FIG. 19 could have a similar stacked structure with a thickertop die 412.

FIG. 21 illustrates a cross-sectional view of a package structure inaccordance with some embodiments. The embodiment in FIG. 21 is similarto the embodiment in FIGS. 19 and 20 except that the package structurein FIG. 21 does not include the encapsulant 112. Details of thisembodiment that are the same or similar to the prior embodiment are notrepeated herein.

The disclosed embodiments of a package structure including dummy diestructures adjacent active dies to reduce the warpage of the packagestructure. This reduction of the warpage of the package structureenables a more reliable package structure by reducing the likelihood ofcold joints between the active dies and the interposer. In someembodiments, the dummy dies are in the scribe line regions and coverstructures are covering some of the active dies while other active diesare not covered by cover structures. The dummy dies may allow for morecontrol of the ratio of the encapsulant and thus may reduce the stressand warpage from the coefficient of thermal expansion (CTE) mismatch. Insome embodiments, the encapsulant can be omitted as the dummy dies inthe scribe line regions and/or the cover structures provide sufficientsupport and protection for the package structure. In some embodiments,the active dies are stacks of one or more dies (logic die stacks and/ormemory die stacks) with the topmost die of the die stacks being thickerthan the other dies of the die stacks. In these embodiments, the dummydies in the scribe line regions and the encapsulant can be omitted asthicker top dies of the die stacks provide sufficient support andprotection for the package structure.

An embodiment is a method including: attaching a first die to a firstside of a first component using first electrical connectors, attaching afirst side of a second die to first side of the first component usingsecond electrical connectors, attaching a dummy die to the first side ofthe first component in a scribe line region of the first component,adhering a cover structure to a second side of the second die, andsingulating the first component and the dummy die to form a packagestructure.

Implementations may include one or more of the following features. Themethod where the first component is a third die. The method furtherincluding: mounting the package structure to a second substrate, thefirst component being interposed between the first and second dies andthe second substrate. The method where singulating includes sawingthrough the first component and the dummy die to form the packagestructure. The method where the first component is a bulk substrateincluding a redistribution structure, the first and second dies beingattached to the redistribution structure. The method where the first dieincludes one or more logic dies, and where the second die includes oneor more memory dies. The method further including: forming through viasextending through the first component, the first and second dies beingelectrically coupled to the through vias; forming third electricalconnectors on a second side of the first component, the second sidebeing opposite the first side, the third electrical connectors beingelectrically coupled to the through vias; mounting the package structureto a second substrate using the third electrical connectors; and bondinga surface mount device (SMD) to the second substrate. The method wherethe dummy die and the cover structure are made of silicon.

An embodiment is a method including: bonding a first die to a first sideof a first structure using first electrical connectors; bonding a memorydie to the first side of the first structure using second electricalconnectors, the memory die being adjacent the first die; attaching asecond die to a back side of the memory die, the second die having athickness greater than a thickness of the memory die; and singulatingthe first structure to form a package structure.

Implementations may include one or more of the following features. Themethod where a thickness of the second die is greater than or equal to120 m. The method where attaching the second die to the back side of thememory die includes bonding the second die to the back side of thememory die, the second die being a memory die that is electricallycoupled to the memory die. The method where attaching the second die tothe back side of the memory die includes adhering the second die to theback side of the memory die with an adhesive layer, the second die beingmade of a bulk material and not including any active or passive devices.The method further including: forming an underfill between the firstside of the first structure and the first die and the memory die andsurrounding the first electrical connectors and the second electricalconnectors; and encapsulating the first die and the memory die with anencapsulant, the encapsulant adjoining portions of the underfill. Themethod further including: adhering a plurality of dummy dies to thefirst side of the first structure in scribe line regions of the firststructure, where singulating the first structure to form the pluralityof package structures includes singulating the plurality of dummy dies.The method further including: before bonding the first die to a firstside of a first structure, forming through vias in the first structure;forming a first redistribution structure on the through vias, the firstredistribution structure being the first side of the first structure,the first redistribution structure being electrically coupled to thethrough vias; thinning a second side of the first structure to exposeends of the through vias, the second side being opposite the first side;forming a second redistribution structure on the second side of thefirst structure thereby forming a first interposer, the secondredistribution structure being electrically coupled to the exposed endsof the through vias; forming third electrical connectors on andelectrically coupled to the first redistribution structure; bonding thethird electrical connectors to a first substrate; and bonding a surfacemount device (SMD) to the first substrate adjacent one of the thirdelectrical connectors.

An embodiment is a structure including: a first side of an interposerbonded to a package substrate; active sides of a first die and a seconddie bonded to a second side of the interposer, the second side beingopposite the first side; a dummy die attached to the second side of theinterposer, the dummy die being adjacent to at least one of the firstdie or the second die; and a cover structure adhered to backside of thesecond die.

Implementations may include one or more of the following features. Thestructure where the dummy die is made of silicon. The structure wherethe second die includes one or more memory dies, the cover structurebeing thicker than each of the one or more memory dies. The structurewhere cover structure is further adhered to a back side of the first dieand to a top surface of the dummy die.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: attaching a first die to afirst side of a first component using first electrical connectors;attaching a first side of a second die to the first side of the firstcomponent using second electrical connectors; attaching a dummy die tothe first side of the first component in a scribe line region of thefirst component; adhering a cover structure to a second side of thesecond die; and singulating the first component and the dummy die toform a package structure.
 2. The method of claim 1, wherein the firstcomponent is a third die.
 3. The method of claim 1 further comprising:mounting the package structure to a second substrate, the firstcomponent being interposed between the first and second dies and thesecond substrate.
 4. The method of claim 1, wherein singulatingcomprises sawing through the first component and the dummy die to formthe package structure.
 5. The method of claim 1, wherein the firstcomponent is a bulk substrate including a redistribution structure, thefirst and second dies being attached to the redistribution structure. 6.The method of claim 1, wherein the first die comprises one or more logicdies, and wherein the second die comprises one or more memory dies. 7.The method of claim 1 further comprising: forming through vias extendingthrough the first component, the first and second dies beingelectrically coupled to the through vias; forming third electricalconnectors on a second side of the first component, the second sidebeing opposite the first side, the third electrical connectors beingelectrically coupled to the through vias; mounting the package structureto a second substrate using the third electrical connectors; and bondinga surface mount device (SMD) to the second substrate.
 8. The method ofclaim 1, wherein the dummy die and the cover structure are made ofsilicon.
 9. A method comprising: bonding a first die to a first side ofa first structure using first electrical connectors; bonding a memorydie to the first side of the first structure using second electricalconnectors, the memory die being adjacent the first die; attaching asecond die to a back side of the memory die, the second die having athickness greater than a thickness of the memory die; and singulatingthe first structure to form a package structure.
 10. The method of claim9, wherein a thickness of the second die is greater than or equal to 120μm.
 11. The method of claim 9, wherein attaching the second die to theback side of the memory die comprises bonding the second die to the backside of the memory die, the second die being a memory die that iselectrically coupled to the memory die.
 12. The method of claim 9,wherein attaching the second die to the back side of the memory diecomprises adhering the second die to the back side of the memory diewith an adhesive layer, the second die being made of a bulk material andnot including any active or passive devices.
 13. The method of claim 9further comprising: forming an underfill between the first side of thefirst structure and the first die and the memory die and surrounding thefirst electrical connectors and the second electrical connectors; andencapsulating the first die and the memory die with an encapsulant, theencapsulant adjoining portions of the underfill.
 14. The method of claim9 further comprising: adhering a plurality of dummy dies to the firstside of the first structure in scribe line regions of the firststructure, wherein singulating the first structure to form the packagestructure comprises singulating the plurality of dummy dies.
 15. Themethod of claim 9 further comprising: before bonding the first die to afirst side of a first structure, forming through vias in the firststructure; forming a first redistribution structure on the through vias,the first redistribution structure being the first side of the firststructure, the first redistribution structure being electrically coupledto the through vias; thinning a second side of the first structure toexpose ends of the through vias, the second side being opposite thefirst side; forming a second redistribution structure on the second sideof the first structure thereby forming a first interposer, the secondredistribution structure being electrically coupled to the exposed endsof the through vias; forming third electrical connectors on andelectrically coupled to the first redistribution structure; bonding thethird electrical connectors to a first substrate; and bonding a surfacemount device (SMD) to the first substrate adjacent one of the thirdelectrical connectors.
 16. The method of claim 9, wherein the first diecomprises one or more logic dies.
 17. A method comprising: bonding afirst die to a first side of a first substrate using first electricalconnectors; bonding a first side of a second die to the first side ofthe first substrate using second electrical connectors; attaching adummy structure to the first side of the first substrate in a scribeline region of the first substrate; adhering a cover structure to asecond side of the second die, the second side being opposite the firstside; singulating the first substrate and the dummy structure to form apackage structure; and mounting the package structure to a secondsubstrate, the first substrate being interposed between the first andsecond dies and the second substrate.
 18. The method of claim 17,wherein the dummy structure is made of silicon.
 19. The method of claim17, wherein the second die comprises one or more memory dies, the coverstructure being thicker than each of the one or more memory dies. 20.The method of claim 17, wherein the cover structure is further adheredto a back side of the first die and to a top surface of the dummystructure.